Hyogo, Japan

Ko Kanaya

This inventor holds 1 USPTO granted patent. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ko Kanaya. Retrieved from https://idiyas.com/inventor/ko-kanaya-eyecwcik

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: The Innovations of Ko Kanaya

Introduction

Ko Kanaya is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on high frequency semiconductor integrated circuits, which are essential for various electronic applications.

Latest Patents

Ko Kanaya holds a patent for a high frequency semiconductor integrated circuit capable of switching between characteristics. This innovative circuit includes a main circuit, a circuit block, a pad, and a wire. The main circuit features an input terminal, a transistor, transmission lines, a pad, and an output terminal. The circuit block consists of a passive circuit and a capacitor. The design allows the main circuit to output an input signal through the transistor and transmission lines, enabling various performances and applications.

Career Highlights

Ko Kanaya is associated with Mitsubishi Electric Corporation, where he has been able to apply his expertise in semiconductor technology. His work has contributed to advancements in high frequency circuits, enhancing their functionality and versatility.

Collaborations

One of his notable coworkers is Shin Chaki, with whom he has collaborated on various projects related to semiconductor innovations.

Conclusion

Ko Kanaya's contributions to the field of semiconductor technology, particularly through his patented innovations, highlight his role as a significant inventor in Japan. His work continues to influence the development of high frequency circuits and their applications in modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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