Kiyoshi Sakaue

Title: Kiyoshi Sakaue: Innovator in Electron Beam Microprocessing

Introduction

Kiyoshi Sakaue is a notable inventor based in Takarazuka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in electron beam microprocessing. With a total of 2 patents, Sakaue's work has advanced the capabilities of microfabrication techniques.

Latest Patents

Sakaue's latest patents include an innovative electron beam microprocessing method. This method involves irradiating a surface of an AlGaInAsP layer with an electron beam, which is controlled to achieve an arbitrary diameter and current density. This process selectively substitutes or generates GaO for a natural oxide layer on the AlGaInAsP surface, followed by dry-etching the layer using bromide in single atomic layer units. Another significant patent focuses on three-dimensional microfabrication and high-density fine structures. In this method, a thin film on an AlGaInAsP substrate is irradiated with electron beams, leading to selective GaO substitution or formation. The substrate's temperature is then adjusted to detach the natural oxide film, allowing for the selective growth of Group III-V compound semiconductor crystals.

Career Highlights

Throughout his career, Sakaue has worked with prominent companies in the semiconductor industry, including Riber SA. His expertise in electron beam technology has positioned him as a key figure in advancing microfabrication techniques.

Collaborations

Sakaue has collaborated with notable professionals in his field, including Tadaaki Kaneko and Naokatsu Sano. These collaborations have contributed to the development of innovative technologies in semiconductor manufacturing.

Conclusion

Kiyoshi Sakaue's contributions to electron beam microprocessing and semiconductor technology have established him as a leading inventor in his field. His patents reflect a commitment to advancing microfabrication techniques, which continue to influence the industry.