This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Research Foundation. Active years: 1982.
Company Filing History:
Years Active: 1982
Title: Kitsuhiro Kimura: Innovator in Semiconductor Technology
Introduction
Kitsuhiro Kimura is a notable inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patents. His work focuses on enhancing the performance and efficiency of semiconductor materials.
Latest Patents
Kitsuhiro Kimura holds a patent for a sapphire single crystal substrate consisting essentially of Ga₂O₃. This substrate is designed for the epitaxial growth of semiconductor layers. The substrate primarily consists of sapphire (aluminum oxide) and at least one additive selected from a group of gallium oxides. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. The choice of additive and its content should be selected based on the specific semiconductor, which may include gallium phosphide, aluminum phosphide, or zinc sulfide.
Career Highlights
Kitsuhiro Kimura is associated with the Semiconductor Research Foundation, where he continues to advance research in semiconductor materials. His work has been instrumental in developing substrates that improve the quality and performance of semiconductor devices.
Collaborations
Kitsuhiro Kimura collaborates with Jun-ichi Nishizawa, a fellow researcher in the field. Their partnership has contributed to the advancement of semiconductor technology and innovation.
Conclusion
Kitsuhiro Kimura's contributions to semiconductor technology through his innovative patents highlight his role as a key figure in the industry. His work continues to influence the development of advanced semiconductor materials and applications.