Location History:
- Leuven, BE (2003)
- Gastonia, NC (US) (2007)
Company Filing History:
Years Active: 2003-2007
Title: Kirklen Henson: Innovator in Semiconductor Technology
Introduction
Kirklen Henson is a notable inventor based in Gastonia, NC (US), recognized for his contributions to semiconductor technology. He holds 2 patents that showcase his innovative approaches in the field. His work has significantly impacted the development of advanced semiconductor devices.
Latest Patents
Henson's latest patents include a method for forming a notched gate insulator for advanced MIS semiconductor devices. This invention discloses methods of providing a semiconductor device with a control electrode structure that has a controlled overlap between the control electrode and the first and second main electrode extensions without the need for many spacers. A preferred method involves etching back an insulating layer after amorphizing and implanting the main electrode extensions. The amorphized portion of the insulating layer serves as a natural etch stop, enabling better fine-tuning of the overlap. Additionally, he has developed MIS transistors with a metal gate and high-k dielectric, which includes a replacement gate process that enhances the uniformity of the PMD CMP step.
Career Highlights
Throughout his career, Kirklen Henson has worked with prominent organizations such as Interuniversitair Microelektronica Centrum (imec) and Koninklijke Philips Corporation N.V. His experience in these companies has allowed him to refine his skills and contribute to significant advancements in semiconductor technology.
Collaborations
Henson has collaborated with notable professionals in the field, including Rita Rooyackers and Serge Vanhaelemeersch. These collaborations have further enriched his work and expanded the impact of his inventions.
Conclusion
Kirklen Henson's innovative contributions to semiconductor technology, particularly through his patents, highlight his expertise and dedication to advancing the field. His work continues to influence the development of cutting-edge semiconductor devices.