The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2007
Filed:
Oct. 15, 2004
Kirklen Henson, Gastonia, NC (US);
Radu Catalin Surdeanu, Heverlee, BE;
Kirklen Henson, Gastonia, NC (US);
Radu Catalin Surdeanu, Heverlee, BE;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
Methods of providing a semiconductor device with a control electrode structure having a controlled overlap between control electrode and first and second main electrode extensions without many spacers are disclosed. A preferred method provides a step of etching back an insulating layer performed after amorphizing and implanting the main electrode extensions. Preferably, the step that amorphizes the extensions also partly amorphizes the insulating layer. Because etch rates of amorphous insulator and crystalline insulator differ, the amorphized portion of the insulating layer may serve as a natural etch stop to enable even better fine-tuning of the overlap. Corresponding semiconductor devices are also provided.