Yokohama, Japan

Kinuyo Tanaka

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kinuyo Tanaka. Retrieved from https://idiyas.com/inventor/kinuyo-tanaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Kinuyo Tanaka: Innovator in Semiconductor Technology

Introduction

Kinuyo Tanaka is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor technology, particularly with her innovative designs and patents. Her work has had a lasting impact on the industry, showcasing her expertise and creativity.

Latest Patents

One of Tanaka's notable patents is the trench dual-gate MOSFET. This invention comprises a projection that is bent to enclose a predetermined region on a semiconductor substrate of a first conductivity type. The projection is defined by a trench formed by selectively removing the surface region of the semiconductor substrate. A gate insulation film is formed on the side wall of the projection and on the semiconductor substrate portion located around the base of the projection. A gate electrode is formed on the side wall of the projection and on the semiconductor substrate portion located around the base of the projection, with the gate insulation film interposed and in a manner to surround the projection. A first impurity region of a second conductivity type, which serves as either a source or drain region, is formed in the top portion of the projection. A second impurity region of the second conductivity type, which serves as either a drain or source region, is formed in the surface region of that portion of the semiconductor substrate which is located around the base of the projection. This patent highlights her innovative approach to enhancing semiconductor performance.

Career Highlights

Tanaka is currently employed at Kabushiki Kaisha Toshiba, where she continues to develop cutting-edge technologies. Her work at Toshiba has allowed her to collaborate with other talented professionals in the field, further advancing her career and contributions to semiconductor technology.

Collaborations

Some of her notable coworkers include Toshiharu Watanabe and Hidemi Ishiuchi. Their collaboration has fostered an environment of innovation and creativity, leading to advancements in their respective projects.

Conclusion

Kinuyo Tanaka is a remarkable inventor whose contributions to semiconductor technology are noteworthy. Her patent for the trench dual-gate MOSFET exemplifies her innovative spirit and technical expertise. Through her work at Toshiba and collaborations with talented colleagues, she continues to make significant strides in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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