Kin L Tan

Title: The Innovations of Kin L Tan

Introduction

Kin L Tan is a notable inventor based in Torrance, CA, who has made significant contributions to the field of high electron mobility transistors. His work focuses on enhancing the performance of these devices, particularly in high-frequency applications.

Latest Patents

Tan holds a patent for a "High power pseudomorphic gallium arsenide high electron mobility transistor." This innovative transistor features improved gain at 94 GHz, utilizing a pseudomorphic AlGaAs/InGaAs structure. The design includes an InGaAs quantum well with a silicon planar doping layer at the bottom, along with a donor layer made of AlGaAs. The resulting transistor exhibits superior gain and noise characteristics at relatively high power levels when operating at 94 GHz. The production process involves an optimized growth technique that begins at a low temperature before increasing to grow subsequent layers.

Career Highlights

Tan is associated with TRW Limited, where he has contributed to advancements in semiconductor technology. His work has been instrumental in developing high-performance transistors that are crucial for various applications in telecommunications and electronics.

Collaborations

Throughout his career, Tan has collaborated with notable colleagues, including Dwight C Streit and Po-Hsin Liu. These partnerships have fostered innovation and have led to significant advancements in their respective fields.

Conclusion

Kin L Tan's contributions to the field of high electron mobility transistors highlight his innovative spirit and dedication to advancing technology. His patent reflects a commitment to improving device performance, which is essential for the future of high-frequency applications.