Kanazawa, Japan

Kimihiro Sasaki

This inventor holds 2 USPTO granted patents. Top assignee: Rohm Co., Ltd.. Active years: 2001-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kimihiro Sasaki. Retrieved from https://idiyas.com/inventor/kimihiro-sasaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 74(Granted Patents)


Company Filing History:


Years Active: 2001-2004

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Kimihiro Sasaki: Innovator in Semiconductor Technology

Introduction

Kimihiro Sasaki is a prominent inventor based in Kanazawa, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to crystalline insulation layers.

Latest Patents

Sasaki's latest patents include a method for epitaxially growing a crystalline insulation layer on a crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride. In this method, a metal that forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate. The metal is chemically combined with reactive gas around the silicon substrate to grow a crystal layer of a crystalline insulation substance. A voltage is applied to the substrate, attracting ions of the reactive gas to the surface of the silicon substrate, which chemically combines with silicon to form an insulation silicon compound layer. This results in a structure where a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film, which has excellent insulation characteristics.

Another patent by Sasaki details a method of forming a crystalline insulation layer on a silicon substrate. Similar to his previous patent, the metal is sputtered and deposited as a film on the silicon substrate, chemically combining with reactive gas to grow a crystal layer. A voltage is applied to attract ions, leading to the formation of an insulation silicon compound layer at the interface of the silicon substrate and the crystalline insulation layer. This innovative approach allows for the epitaxial growth of additional semiconductor layers or crystalline ferroelectric layers, enabling the creation of three-dimensional semiconductor devices, composite semiconductor devices, and high-performance semiconductor memory devices. Thus, Sasaki's work contributes to the development of new and highly integrated semiconductor devices at a lower cost.

Career Highlights

Kimihiro Sasaki is currently employed at Rohm Co., Ltd., where he continues to advance semiconductor technology. His work has positioned him as a key figure in the industry, contributing to the development of innovative solutions that enhance device performance.

Collaborations

Sasaki has collaborated with notable coworkers, including Tomonobu Hata and Akira Kamisawa. Their combined expertise has furthered advancements in semiconductor technology.

Conclusion

Kimihiro Sasaki's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…