The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2004
Filed:
Jul. 09, 2002
Rohm Co., Ltd., Kyoto, JP;
Abstract
Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.