Kim Seung

Title: Innovations by Inventor Kim Seung

Introduction

Kim Seung is an accomplished inventor based in North Andover, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of isolation structures for field effect transistors. His innovative work has led to the development of a unique patent that enhances the performance of semiconductor devices.

Latest Patents

Kim Seung holds a patent for the "Fabrication of reverse shallow trench isolation structures with super-steep retrograde wells." This patent outlines methods for forming reverse shallow trench isolation structures that are crucial for the effective functioning of field effect transistor elements. The disclosed method includes a thermal oxidation process to create a layer of thermal oxide material on a semiconductor layer, followed by the formation of openings to establish isolation regions.

Career Highlights

Throughout his career, Kim has been associated with Globalfoundries Inc., a leading semiconductor manufacturer. His work at the company has been instrumental in advancing semiconductor fabrication techniques. With one patent to his name, he continues to contribute to the innovation landscape in the semiconductor industry.

Collaborations

Kim Seung has collaborated with notable colleagues, including Tong Weihua and Krishnan Bharat. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field.

Conclusion

In summary, Kim Seung is a notable inventor whose work in semiconductor technology has led to significant advancements in the industry. His patent on reverse shallow trench isolation structures exemplifies his commitment to innovation and excellence in his field.