Dresden, Germany

Kim Hong Lucas Chai

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Texas Instruments Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kim Hong Lucas Chai. Retrieved from https://idiyas.com/inventor/kim-hong-lucas-chai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Kim Hong Lucas Chai

Introduction

Kim Hong Lucas Chai is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor package substrate.

Latest Patents

Kim holds a patent for a semiconductor package substrate with a smooth groove straddling the topside and sidewall. This invention includes a metallic substrate with a roughened surface, a semiconductor die with bond pads, and an adhesive that bonds the semiconductor die to the metallic substrate. The adhesive contains a resin, and the groove around the semiconductor die has a surface roughness that is less than that of the roughened surface of the metallic substrate.

Career Highlights

Kim is currently employed at Texas Instruments Corporation, where he continues to innovate in semiconductor technologies. His work has been instrumental in advancing the efficiency and performance of semiconductor packages.

Collaborations

One of his notable coworkers is Bob Lee, with whom he collaborates on various projects within the company.

Conclusion

Kim Hong Lucas Chai's contributions to semiconductor technology exemplify the spirit of innovation. His patent reflects a significant advancement in the field, showcasing his expertise and dedication to improving technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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