Kim Changhwa

Title: Kim Changhwa: Innovator in Fin Field Effect Transistor Technology

Introduction

Kim Changhwa is a notable inventor based in Hwaseong, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the design and fabrication of fin field effect transistors (FinFETs). His innovative methods have the potential to enhance the performance of electronic devices.

Latest Patents

Kim Changhwa holds a patent for a "Method for forming low parasitic capacitance source and drain contacts." This method addresses the challenges associated with forming low parasitic capacitance contacts in source-drain structures of FinFET devices. The process involves etching a long trench that extends across all source-drain regions, followed by the formation of a conductive layer and the strategic filling of trenches with various materials to optimize contact performance. This innovation is crucial for improving the efficiency and effectiveness of modern electronic components.

Career Highlights

Kim Changhwa is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of semiconductor research and development. With a focus on enhancing device performance, he has contributed to the advancement of technologies that are essential for the next generation of electronic devices.

Collaborations

Throughout his career, Kim has collaborated with esteemed colleagues, including Jorge A Kittl and David Seo. These collaborations have fostered an environment of innovation and have led to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Kim Changhwa is a prominent figure in the field of semiconductor technology, with a focus on improving FinFET devices through innovative methods. His contributions, particularly in forming low parasitic capacitance contacts, are paving the way for advancements in electronic device performance.