This inventor holds 2 USPTO granted patents. Top assignees: Samsung Electronics Ltd., T.e.s., Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Kijong Park: Semiconductor and Integrated Circuit Inventions
Introduction
Kijong Park is an inventor based in Suwon-si, South Korea. His patent work focuses on semiconductor manufacturing and memory-device structures. He is associated with Samsung Electronics Ltd. and T.e.s., Inc. His listed portfolio includes 2 patents.
Latest Patents
Park’s latest patents address processes for manufacturing integrated circuits and designs for semiconductor memory devices.
“Method of Manufacturing Integrated Circuit Device” describes a process that forms a hafnium oxide film on a substrate and partially etches it. The method alternates a dry treatment, which modifies the film’s surface region using a halogen-containing gas and a hydrogen-containing catalytic gas without plasma, with a wet treatment using an acidic solution to remove at least part of the modified region.
“Semiconductor Memory Device and Method of Manufacturing the Same” describes a memory structure with a bit line, a channel trench, a channel layer, a word line, a gate insulating layer, and a capacitor structure. The channel layer has a double-layer structure comprising an oxide semiconductor layer and a graphene layer.
Career Highlights
Park’s listed patent contributions span both materials processing and device architecture. One invention concerns controlled etching of hafnium oxide films, while the other describes a semiconductor memory device incorporating an oxide-semiconductor and graphene channel structure.
Collaborations
Park’s listed coworkers include Seungmin Shin and Sangjun Park. His professional affiliations include Samsung Electronics Ltd. and T.e.s., Inc.
Conclusion
Kijong Park’s patent portfolio reflects work on semiconductor fabrication and memory-device design, with inventions addressing both thin-film processing and channel-layer structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile