Ki Min Kim

Title: Innovations of Ki Min Kim in Semiconductor Technology

Introduction

Ki Min Kim is a notable inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFET devices. With a total of 2 patents to his name, his work has garnered attention for its innovative approaches and practical applications.

Latest Patents

One of Ki Min Kim's latest patents is a MOSFET device with an undulating channel. This SiC MOSFET device features alternating p-well widths, which include an undulating channel. The design provides current paths of multiple widths, enabling the optimization of on-resistance, transconductance, threshold voltage, and channel length. The multi-width p-well region further defines corresponding multi-width Junction FETs (JFETs). These multi-width JFETs enhance the device's response to short-circuit events. Additionally, a high breakdown voltage is achieved by distributing a high electric field in a JFET of a first width into a JFET of a second width.

Career Highlights

Ki Min Kim is currently employed at Semiconductor Components Industries, LLC, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the performance and reliability of semiconductor devices.

Collaborations

Ki Min Kim has collaborated with notable colleagues, including Kevin Kyuheon Cho and Bongyong Lee. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.

Conclusion

Ki Min Kim's contributions to semiconductor technology, particularly through his patents, highlight his role as a leading inventor in the field. His innovative designs and collaborations continue to push the boundaries of what is possible in semiconductor applications.