Osan, South Korea

Ki-Jik Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ki-Jik Lee. Retrieved from https://idiyas.com/inventor/ki-jik-lee-oz3j09yj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Ki-Jik Lee: Innovator in Semiconductor Technology

Introduction

Ki-Jik Lee is a notable inventor based in Osan, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Ki-Jik Lee holds a patent for a semiconductor device and methods of manufacturing the same. This semiconductor device includes at least two transistors and a charge-trapping structure. The charge-trapping structure is designed to trap charges that are moved from a selected transistor toward a non-selected transistor. This innovative design prevents an increase in the threshold voltage of the non-selected transistor, thereby improving the overall functionality of the device. He has 1 patent to his name.

Career Highlights

Ki-Jik Lee is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to collaborate with some of the brightest minds in the industry.

Collaborations

One of his notable coworkers is Soo-cheol Lee, with whom he has likely shared insights and expertise in semiconductor technology.

Conclusion

Ki-Jik Lee's contributions to semiconductor technology exemplify the innovative spirit of modern inventors. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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