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For the Inventor, By the Inventor

Suwon-si, South Korea

Ki-Heung Kim

USPTO Granted Patents = 7 

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal7 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2012-2025

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7 patents (USPTO):Explore Patents
1. 12474871 - Memory module for performing one-time programmable (OTP) addressing operation to store unique ID of each memory device in an ID storge region of each memory device, and storage device including the same (2025-11-18),
2. 12423182 - Memory device and operation method thereof (2025-09-23),
3. 11921579 - Method of operating memory device, method of operating memory controller and memory system (2024-03-05),
4. 11049584 - Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing same (2021-06-29),
5. 8483001 - Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator (2013-07-09),
6. 8416632 - Bitline precharge voltage generator, semiconductor memory device comprising same, and method of trimming bitline precharge voltage (2013-04-09),
7. 8284624 - Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator (2012-10-09),

Title: The Innovations of Ki-Heung Kim: Pioneering Memory Device Technology

Introduction

Ki-Heung Kim, an accomplished inventor based in Suwon-si, South Korea, has significantly contributed to the field of memory device technology. With a remarkable portfolio of five patents, Kim continues to push the boundaries of innovation within the electronics industry.

Latest Patents

Among his latest inventions are two notable patents that focus on the operation of memory devices and controllers. The first patent outlines a method of operating a memory device designed to enhance error correction. This method involves receiving commands from a controller, activating memory pages, reading data, detecting errors, and writing corrected data back to the activated page based on the nature of the detected error. This innovation not only streamlines memory operations but also increases reliability by addressing both single-bit and multi-bit errors effectively.

The second patent describes an integrated circuit device featuring memory dies coupled with buffer dies that incorporate test interface circuits. This invention is pivotal for testing integrated circuit memory devices, as it generates internal test signals synchronized with different clock frequencies. The structure enables more efficient testing protocols, thereby improving the performance evaluation of stacked memory configurations.

Career Highlights

Ki-Heung Kim has established a successful career at Samsung Electronics Co., Ltd., a global leader in technology. His inventive contributions have advanced the capabilities of memory devices, solidifying his reputation as an expert in this specialized field.

Collaborations

Throughout his career, Kim has collaborated with talented colleagues such as Seong-Jin Jang and Tae-Yoon Lee. These partnerships have fostered a creative environment that encourages innovative solutions in memory technology, demonstrating the power of teamwork in achieving remarkable advancements.

Conclusion

In conclusion, Ki-Heung Kim stands out as a visionary inventor whose contributions to memory device technology are noteworthy. With his innovative patents and collaborative spirit, he continues to shape the future of electronics, ensuring that we have reliable and efficient memory systems for years to come.

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