The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Sep. 18, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ki-Heung Kim, Suwon-si, KR;

Kyo-Min Sohn, Yongin-si, KR;

Young-Soo Sohn, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/38 (2006.01); H01L 25/065 (2006.01); G11C 29/12 (2006.01); G11C 11/4076 (2006.01); G11C 7/22 (2006.01); G11C 11/4093 (2006.01); G11C 29/56 (2006.01); G11C 29/02 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/38 (2013.01); G11C 7/222 (2013.01); G11C 11/4076 (2013.01); G11C 11/4093 (2013.01); G11C 29/025 (2013.01); G11C 29/12015 (2013.01); G11C 29/50012 (2013.01); G11C 29/56012 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06541 (2013.01);
Abstract

An integrated circuit device includes a stack of integrated circuit memory dies having a plurality of through-substrate vias (TSVs) extending therethrough, and a buffer die electrically coupled to the plurality of TSVs. The buffer die includes a test interface circuit, which is configured to: (i) generate a plurality of internal test signals, which are synchronized with a second clock signal having a second frequency, from at least one control code, and from a plurality of external test signals, which are synchronized with a first clock signal having a first frequency less than the second frequency, and (ii) provide the plurality of internal test signals to at least one of the memory dies in said stack during a first test mode. The second frequency may be greater than three (3) times the first frequency.


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