Shenzhen, China

Keyuan Ding

This inventor holds 1 USPTO granted patent. Top assignee: Shenzhen University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keyuan Ding. Retrieved from https://idiyas.com/inventor/keyuan-ding-3ex8omgb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Keyuan Ding: Innovator in Threshold Switching Materials

Introduction

Keyuan Ding is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of materials science, particularly in the development of threshold switching materials. His innovative work has led to the creation of a patent that showcases his expertise and creativity.

Latest Patents

Keyuan Ding holds a patent for a threshold switching material, a threshold switching device, and a preparation method thereof. The patent describes a threshold switching material with the chemical formula MD, where M can be one of La, Ce, Gd, Lu, Sc, Y, Zr, Mo, Hf, W, Ta, and D can be one of S, Se, Te, with the condition that 0.1≤x≤0.8. This invention has the potential to impact various applications in electronics and materials engineering.

Career Highlights

Keyuan Ding is affiliated with Shenzhen University, where he continues to advance his research and innovation in materials science. His work has garnered attention for its practical applications and theoretical advancements in the field.

Collaborations

Keyuan has collaborated with notable colleagues, including Feng Rao and Jintao Chen, contributing to a dynamic research environment that fosters innovation and discovery.

Conclusion

Keyuan Ding's contributions to threshold switching materials exemplify the spirit of innovation in modern science. His patent reflects a significant advancement in the field, showcasing his dedication to research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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