Portland, OR, United States of America

Kevin P OBrien


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations and Contributions of Inventor Kevin P. O'Brien

Introduction

Kevin P. O'Brien, based in Portland, Oregon, is a notable inventor recognized for his contributions to the field of memory devices. With a focus on perpendicular spin transfer torque memory (pSTTM) technology, O’Brien has made significant strides in enhancing data storage capabilities.

Latest Patents

O'Brien holds a patent for a groundbreaking invention titled "Perpendicular STTM Free Layer Including Protective Cap." This innovative patent introduces a perpendicular spin transfer torque memory device that incorporates a magnetic tunnel junction (MTJ) with a design featuring a free magnetic stack and a fixed magnetic stack, separated by a dielectric tunneling layer. The free magnetic stack includes an uppermost magnetic layer that is protected by a cap layer and a protective layer containing materials such as ruthenium, cobalt/iron/boron, molybdenum, cobalt, tungsten, or platinum. This protective layer is essential in minimizing potential physical and chemical attacks on the cap layer, thereby improving the interface anisotropy of the MTJ free magnetic layer.

Career Highlights

Kevin O'Brien has established a successful career at Intel Corporation, a leading tech company renowned for its innovations in computing technology. His work in developing advanced memory technologies plays a crucial role in improving electronic devices' efficiency and performance. O'Brien's patent showcases his commitment to pushing the boundaries of technological advancements in the field of data storage.

Collaborations

Throughout his career, O'Brien has collaborated with talented individuals such as Kaan Oguz and Brian S. Doyle. These collaborations have fostered an environment of innovation and creativity, contributing to the successful development of cutting-edge technologies.

Conclusion

Kevin P. O'Brien exemplifies the spirit of innovation in the field of memory technology through his patent and career at Intel Corporation. His contributions, alongside his collaborations with esteemed colleagues, signify a dedication to enhancing data storage solutions, making a lasting impact on the technology landscape.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…