Ballston Spa, NY, United States of America

Kevin E Mello


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: Innovations of Kevin E Mello

Introduction

Kevin E Mello is an accomplished inventor based in Ballston Spa, NY (US). He has made significant contributions to the field of materials science, particularly in the development of ohmic contacts for Gallium Arsenide (GaAs). His innovative work has implications for various electronic applications.

Latest Patents

Kevin E Mello holds a patent titled "Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt." This patent describes a partially ionized beam (PIB) deposition technique used to heteroepitaxially deposit a thin film of CoGe.sub.2 (001) on GaAs (100) substrates. The resulting epitaxial arrangement is CoGe.sub.2 (001) GaAs (100). The optimal conditions for achieving the best epitaxial layer include an ion energy of 1100 eV to 1200 eV and a substrate temperature of approximately 280 degrees Centigrade. The substrate wafers are treated by immersion in HF:H.sub.2 O 1:10 immediately prior to the deposition of the epitaxial layer. Contacts grown under these optimal conditions exhibit ohmic behavior, while those grown at higher or lower substrate temperatures show rectifying behavior. This innovative approach leads to the formation of a stable contact to n-GaAs.

Career Highlights

Kevin E Mello is associated with the US Government as represented by the Secretary of the Army. His work has been instrumental in advancing the understanding and application of materials in electronic devices. His research has contributed to the development of reliable contacts in semiconductor technology.

Collaborations

Kevin has collaborated with notable colleagues, including Sabrina L Lee and Steven Robert Soss. Their combined expertise has furthered the research and development efforts in their respective fields.

Conclusion

Kevin E Mello's contributions to the field of materials science, particularly through his patent on ohmic contacts to Gallium Arsenide, highlight his innovative spirit and dedication to advancing technology. His work continues to influence the development of electronic materials and devices.

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