The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1999
Filed:
Jul. 08, 1997
Sabrina L Lee, Schenectady, NY (US);
Kevin E Mello, Ballston Spa, NY (US);
Steven R Soss, San Jose, CA (US);
Toh-Ming Lu, Loudenville, NY (US);
Shyam P Murarka, Clifton Park, NY (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A partially ionized beam (PIB) deposition technique is used to heteroepitally deposit a thin film of CoGe.sub.2 (001) on GaAs (100) substrates 14. The resulting epitaxial arrangement is CoGe.sub.2 (001) GaAs (100). The best epitaxial layer is obtained with an ion energy 1100 eV to 1200 eV and with a substrate temperature of approximately 280.degree. Centigrade. The substrate wafers are treated only by immersion in HF:H.sub.2 O 1:10 immediately prior to deposition of the epitaxial layer. Contacts grown at these optimal conditions display ohmic behavior, while contacts grown at higher or lower substrate temperatures exhibit rectifying behavior. Epitaxial formation of a high melting point, low resistivity cobalt germanide phase results in the formation of a stable contact to n-GaAs.