Company Filing History:
Years Active: 2024-2025
Title: Kevin D Goodman: Innovator in Microelectronics
Introduction
Kevin D Goodman is a notable inventor based in Ellettsville, Indiana, who has made significant contributions to the field of microelectronics. With a total of 2 patents, Goodman has focused on developing advanced technologies that enhance the performance and reliability of electronic devices in challenging environments.
Latest Patents
Goodman's latest patents include a "Quantum structure getter for radiation hardened transistors" and a "Cadmium selenide-indium arsenide heterojunction bipolar transistor." The first patent describes a microelectronic device that incorporates a quantum structure getter (QSG) to harden it against radiation. This innovative device features a conductive channel and a material stack that includes a capping layer, barrier layers, and quantum structures. These quantum structures form a low energy area beneath the field effect transistor (FET), effectively trapping and confining electron-hole pair wave functions produced by ionizing radiation. This process reduces the ionized photocurrent that reaches the conducting channel, enhancing the device's resilience to radiation.
The second patent focuses on a cadmium selenide-indium arsenide heterojunction bipolar transistor. This device consists of a collector made of n-type cadmium selenide, a base layer of indium arsenide, and an emitter layer that reverts to cadmium selenide. The cadmium selenide layer is particularly noteworthy due to its high reaction rate with neutrons, which alters the electrical signal of the HBT in neutron environments. This innovative HBT design also offers higher gains compared to traditional homojunction bipolar transistors.
Career Highlights
Kevin D Goodman is currently employed by the United States Navy, where he contributes his expertise in microelectronics. His work focuses on developing technologies that meet the rigorous demands of military applications.
Collaborations
Goodman has collaborated with notable colleagues, including Timothy Allen Morgan and Matthew Gadlage, to advance his research and development efforts in microelectronics.
Conclusion
Kevin D Goodman is a distinguished inventor whose work in microelectronics has led to groundbreaking advancements in radiation-hardened devices and heterojunction bipolar transistors. His contributions continue to impact the field significantly.