The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Mar. 02, 2022
The United States of America, As Represented BY the Secretary of the Navy, Crane, IN (US);
Kevin D. Goodman, Ellettsville, IN (US);
The United States of America, Represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Provided is a cadmium selenide-indium arsenide heterojunction bipolar transistor. The device includes a first layer comprising a collector of the transistor made of n-type cadmium selenide, a base layer containing indium arsenide, and an emitter layer that reverts to cadmium selenide. The inventive device includes a large neutron cross section via the cadmium selenide layer. The cadmium selenide layer holds a high reaction rate with neutrons thus altering the electrical signal of the HBT in a neutron environment. The inventive HBT also yields higher gains than current homojunction bipolar transistors, such as those utilizing pure indium arsenide or silicon.