This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2004.
Company Filing History:
Years Active: 2004
Title: Kerstin Pomplun: Innovator in Semiconductor Technology
Introduction
Kerstin Pomplun is a notable inventor based in Dresden, Germany. She has made significant contributions to the field of semiconductor technology, particularly through her innovative methods in producing semiconductor components.
Latest Patents
Kerstin holds a patent for a "Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer." This patent describes a semiconductor component that features a cavity formed in a monocrystalline silicon substrate. The wall of the cavity is covered by a cover layer, at least in an upper collar region, and a covering layer is then applied to the surface of the silicon substrate using a selective epitaxial growth method. The method is designed to be physically simple and cost-effective. It can be particularly useful for covering a trench prior to high-temperature processes during the production of DRAM memory, allowing for the trench to be reopened after these processes to provide a trench capacitor. Kerstin has 1 patent to her name.
Career Highlights
Kerstin Pomplun is currently employed at Infineon Technologies AG, where she continues to advance her research and development in semiconductor technologies. Her work has been instrumental in enhancing the efficiency and effectiveness of semiconductor components.
Collaborations
Kerstin has collaborated with notable colleagues, including Dietmar Temmler and Martin Popp, contributing to various projects and innovations within the semiconductor field.
Conclusion
Kerstin Pomplun is a pioneering inventor whose work in semiconductor technology has the potential to impact the industry significantly. Her innovative methods and collaborations highlight her dedication to advancing technology in this critical field.
