Kersi F Cooper

Title: Kersi F Cooper: Innovator in Programmable Memory Technology

Introduction

Kersi F Cooper is a notable inventor based in San Jose, CA, recognized for his contributions to programmable memory technology. With a total of 2 patents, Cooper has made significant advancements in the field of memory elements, particularly in the design and functionality of programmable read-only memory.

Latest Patents

Cooper's latest patents focus on a programmable memory element for programmable read-only memory. The innovative design includes a Nichrome fusible link with a first metallization layer in contact with the link. An insulating layer is formed over the first metallization layer and a portion of the Nichrome. This insulating layer is created by first chemically vapor depositing a thin layer of silicon dioxide at atmospheric pressure, followed by a thicker layer of silicon nitride deposited in a vacuum. The thin silicon dioxide layer provides moisture protection to the Nichrome, while the silicon nitride layer ensures electrical insulation between metallization layers. A via is formed in the silicon nitride layer to expose part of the first metallization layer, allowing for the deposition of a second metallization layer.

Career Highlights

Kersi F Cooper has built a successful career at Raytheon Company, where he has been instrumental in developing advanced memory technologies. His work has contributed to the enhancement of programmable memory systems, making them more efficient and reliable.

Collaborations

Cooper has collaborated with various professionals in the field, including his coworker Jerry W Drake, to further innovate and refine memory technologies.

Conclusion

Kersi F Cooper's contributions to programmable memory technology have established him as a key figure in the field. His innovative patents and work at Raytheon Company continue to influence advancements in memory systems.