Yokohama, Japan

Kenzo Iizuka

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Fujitsu Semiconductor Limited. Active years: 2013.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Kenzo Iizuka: Innovator in Semiconductor Technology

Introduction

Kenzo Iizuka is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device manufacturing method.

Latest Patents

Kenzo Iizuka holds 1 patent for his invention titled "Semiconductor device manufacture method and semiconductor device." This patent outlines a comprehensive method for manufacturing semiconductor devices, which includes forming active regions in a semiconductor substrate and utilizing gate insulating films made from silicon oxide. The process also involves the creation of gate electrodes and the application of insulating films, showcasing a sophisticated approach to semiconductor fabrication.

Career Highlights

Kenzo Iizuka is currently employed at Fujitsu Semiconductor Limited, where he continues to advance semiconductor technology. His work at Fujitsu has allowed him to collaborate with other experts in the field, further enhancing his contributions to the industry.

Collaborations

One of his notable collaborators is Hajime Kurata. Together, they have worked on various projects that aim to improve semiconductor manufacturing processes.

Conclusion

Kenzo Iizuka's innovative approach to semiconductor device manufacturing exemplifies the importance of research and development in technology. His contributions continue to influence the semiconductor industry and pave the way for future advancements.

Profile summary based on public USPTO records.
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