Tokyo, Japan

Kentaro Ueda

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2004-2019

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4 patents (USPTO):Explore Patents

Title: Kentaro Ueda: Innovator in Magnetic Domain Technology

Introduction

Kentaro Ueda is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of technology, particularly in the development of innovative devices that utilize magnetic domain walls. With a total of 4 patents to his name, Ueda's work has the potential to revolutionize memory storage and sensor applications.

Latest Patents

Ueda's latest patents include a "Metallic-magnetic-domain-wall-based nonvolatile tunable resistor for memory and sensor applications." This invention allows for control of electrical conductivity through electrically conductive magnetic domain walls between magnetic domains. By altering the configuration of these magnetic domains, the electrical resistance of a device can be modified, making it suitable for non-volatile information storage or sensor applications. Another notable patent is for a "Protective film for protecting a dielectric layer of a plasma display panel from discharge." This protective film, which contains a metallic oxide, has a volume resistivity of 3.5×10⁶ Ω·cm or more, enhancing the durability of plasma display panels.

Career Highlights

Throughout his career, Ueda has worked with notable companies such as Pioneer Corporation and NEC Corporation. His experience in these organizations has contributed to his expertise in developing advanced technologies.

Collaborations

Ueda has collaborated with esteemed colleagues, including Ken Ito and Takeshi Kokura. Their combined efforts have led to significant advancements in the field of magnetic domain technology.

Conclusion

Kentaro Ueda's innovative work in magnetic domain technology and his contributions to the development of advanced devices highlight his importance as an inventor. His patents reflect a commitment to enhancing technology for memory and sensor applications.

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