Kuwana, Japan

Kenta Shimomura

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kioxia Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenta Shimomura. Retrieved from https://idiyas.com/inventor/kenta-shimomura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kenta Shimomura and Semiconductor Memory Innovation.

Introduction

Kenta Shimomura is an inventor associated with Kioxia Corporation in Kuwana, Japan. His patent work concerns semiconductor memory device design.

Latest Patents

The provided information lists 1 patent for Shimomura: “Semiconductor memory device.” The invention describes a device with a first conductive film, a semiconductor layer, and a stacked body containing insulated conductive layers. A semiconductor film extends through the stacked body and first conductive film, while an insulating film separates it from the stacked conductive layers. A carbon-containing second conductive film directly contacts the first conductive film and either one end or a side surface of the semiconductor film.

Career Highlights

Shimomura is identified as an inventor working at Kioxia Corporation, a company focused on memory and storage technologies. His listed patent reflects work on the structure and conductive connections of semiconductor memory devices.

Collaborations

Karin Takayama is identified as Shimomura’s coworker. The supplied information does not specify whether they collaborated on this patent or other projects.

Conclusion

Kenta Shimomura’s listed patent documents a semiconductor memory device design involving layered conductive structures and a carbon-containing contact film.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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