Nashville, TN, United States of America

Kent A Hallman

This inventor holds 1 USPTO granted patent. Top assignee: Vanderbilt University. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kent A Hallman. Retrieved from https://idiyas.com/inventor/kent-a-hallman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Kent A Hallman: Innovator in Plasmon Coupling Materials

Introduction

Kent A Hallman is a notable inventor based in Nashville, TN (US). He has made significant contributions to the field of plasmon coupling materials. His innovative work has led to the development of methods and systems that utilize these materials effectively.

Latest Patents

Kent A Hallman holds 1 patent related to plasmon coupling materials. His patent encompasses materials, methods of making these materials, and systems that include them. The patent specifically details the use of two types of particles, such as nanoparticles, that exhibit harmonic surface plasmon resonances (SPR). These particles are referred to as a harmonically paired set, separated by a dielectric layer that prevents direct electron transfer.

Career Highlights

Kent A Hallman is affiliated with Vanderbilt University, where he continues to advance research in his field. His work has implications for various measurement systems and devices, showcasing the practical applications of his inventions.

Collaborations

Kent has collaborated with notable colleagues, including Nathan James Spear and Janet E Macdonald. Their combined expertise contributes to the innovative research environment at Vanderbilt University.

Conclusion

Kent A Hallman's contributions to plasmon coupling materials highlight his role as a significant inventor in the field. His work not only advances scientific understanding but also paves the way for practical applications in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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