Company Filing History:
1 out of 832,843 Years Active: 2001
Title: Innovations of Kensuke Kegeyama in Ferroelectric Thin Films
Introduction
Kensuke Kegeyama is a notable inventor based in Saitama, Japan. He has made significant contributions to the field of materials science, particularly in the development of ferroelectric thin films. His innovative work has implications for nonvolatile memory applications, showcasing his expertise and dedication to advancing technology.
Latest Patents
Kensuke Kegeyama holds a patent for "Ferroelectric thin films and solutions: compositions." This invention describes a ferroelectric thin film formed from a liquid composition through sol-gel processing. The film exhibits a large amount of polarization, improved retention, and imprint characteristics compared to traditional materials like PZT. It features minute grains, fine film quality, homogeneous electrical properties, and low leakage currents, making it well-suited for nonvolatile memory applications. The composition includes a metal oxide represented by the general formula: (Pb,Ca,Sr,La,)(Zr,Ti,)O,, with specific parameters ensuring optimal performance.
Career Highlights
Throughout his career, Kensuke Kegeyama has focused on the development of advanced materials that enhance electronic devices. His work on ferroelectric thin films has positioned him as a key figure in the field, contributing to innovations that improve memory technology. His dedication to research and development has led to significant advancements in the understanding and application of ferroelectric materials.
Collaborations
Kensuke has collaborated with notable colleagues, including Shan Sun and Thomas Domokos Hadnagy. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas, further enhancing the impact of their collective research.
Conclusion
Kensuke Kegeyama's contributions to the field of ferroelectric thin films demonstrate his commitment to innovation and excellence in materials science. His patented work not only advances technology but also paves the way for future developments in nonvolatile memory applications.