Other

Kensuke Kegeyama

Shan Sun

Katsumi Ogi

Hiroto Uchida

Tsutomu Atsuki

Tom E Davenport

Thomas Domokos Hadnagy

Gakuji Uozumi

The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pb,Ca,Sr,La,)(Zr,Ti,)O,, wherein 0.9&lE;V&lE;1.3, 0&lE;W&lE;0.1, 0&lE;X&lE;0.1, 0<Y&lE;0.1, 0<Z&lE;0.9 and at least either of W and X is not 0, is formed from a solution where thermally decomposable organometallic compounds of respective metals constituting said metal oxide, hydrolyzable organometallic compounds thereof, and partially hydrolyzed products and/or polycondensation products of said hydrolyzable organometallic compounds are dissolved in an organic solvent in such a proportion as to provide the metal atom ratio represented by the above-mentioned formula.

Ferroelectric thin films and solutions: compositions

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Saitama, Japan

Kensuke Kegeyama