Kenji Yagishita

Title: Kenji Yagishita: Innovator in Semiconductor Technology

Introduction

Kenji Yagishita is a notable inventor based in Hitachiota, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique turn off type semiconductor device.

Latest Patents

Yagishita holds a patent for a turn off type semiconductor device, which includes a method of producing the same. The invention involves dividing an n-type emitter layer into multiple elements using trenches. A silicide layer made of a high melting point metal is placed on a p-type layer adjacent to the individual elements of the n-type emitter layer at the bottom of each trench. A gate electrode surrounds the plurality of elements of the n-type emitter layer, which is divided by the trenches filled with insulators. A cathode electrode is positioned on both the insulators and the n-type emitter layer. This innovative design enhances the performance and efficiency of semiconductor devices.

Career Highlights

Kenji Yagishita is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to focus on advancing semiconductor technology. With a total of 1 patent, Yagishita has established himself as a key figure in his field.

Collaborations

Yagishita has collaborated with notable colleagues, including Hideo Honma and Yukimasa Satou. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Kenji Yagishita's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of efficient semiconductor devices.