This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Nippondenso Co., Ltd.. Active years: 1998-1999.
Company Filing History:
Years Active: 1998-1999
Title: Kenji Shiratori: Innovator in Semiconductor Technology
Introduction
Kenji Shiratori is a notable inventor based in Nukata-gun, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to improving device performance.
Latest Patents
Shiratori's latest patents include a MIS type semiconductor device and a method for manufacturing the same. This invention involves doping a P-type impurity through oblique ion implantation into N-type impurity diffusion layers on both sides of a gate electrode of a P-channel MOS transistor. This technique effectively cancels the impurity in the N-type region overlapped by the gate electrode, which helps to suppress the rise in the threshold voltage of the P-channel type MIS transistor. Additionally, it minimizes fluctuations in the current flow and enhances the current-driving capacity of the device.
Career Highlights
Throughout his career, Kenji Shiratori has worked with prominent companies such as Nippondenso Co., Ltd. and Nabtesco Corporation. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.
Collaborations
Some of his notable coworkers include Shigemitsu Fukatsu and Ryoichi Kubokoya. Their collaboration has likely played a role in the development of innovative solutions in their respective fields.
Conclusion
Kenji Shiratori's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.