Kitakyushu, Japan

Kenji Ohno

This inventor holds 1 USPTO granted patent. Top assignee: Catalysts & Chemicals Industries Co., Ltd.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenji Ohno. Retrieved from https://idiyas.com/inventor/kenji-ohno-z98ih7nb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Kenji Ohno: Innovator in Particle Layer Technology

Introduction

Kenji Ohno is a notable inventor based in Kitakyushu, Japan. He has made significant contributions to the field of particle layer technology, particularly through his innovative patent. His work is recognized for its potential applications in various industries.

Latest Patents

Kenji Ohno holds a patent titled "Method of forming particle layer on substrate, method of planarizing." This patent showcases his expertise in developing methods that enhance the efficiency and effectiveness of particle layer formation.

Career Highlights

Ohno is currently employed at Catalysts & Chemicals Industries Co., Ltd. His role at the company allows him to apply his inventive skills in a practical setting, contributing to advancements in chemical processes and materials.

Collaborations

Throughout his career, Kenji Ohno has collaborated with esteemed colleagues, including Akira Nakashima and Michio Komatsu. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Kenji Ohno's contributions to particle layer technology and his collaborative efforts with fellow inventors highlight his importance in the field. His work continues to influence advancements in chemical engineering and materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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