Kenji Kohguchi

Title: Kenji Kohguchi: Innovator in C-MOS Device Protection

Introduction

Kenji Kohguchi is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of input protection devices for C-MOS devices. His innovative work has led to the filing of a patent that addresses critical aspects of device protection.

Latest Patents

Kohguchi holds a patent for an input protection device designed for C-MOS devices. This device features an n-type semiconductor substrate and a p-type well region. It comprises a diode formed by the p-type well region and an n.sup.+ -type layer diffusion, which is connected between the gate of a C-MOS FET and ground. The n.sup.+ -type layer of the diode has a higher impurity concentration and greater diffusion depth than those of n.sup.+ -type layers formed in the p-type well region, which constitute the source and drain of an n-channel MOSFET. He has 1 patent to his name.

Career Highlights

Kohguchi has worked at Tokyo Shibaura Denki Kabushiki Kaisha, where he has been involved in various projects related to semiconductor technology. His expertise in C-MOS devices has positioned him as a valuable asset in the field.

Collaborations

Throughout his career, Kohguchi has collaborated with notable colleagues, including Isao Baba and Takeo Kondo. These collaborations have contributed to advancements in semiconductor technology and innovation.

Conclusion

Kenji Kohguchi's contributions to the field of semiconductor technology, particularly through his patent for an input protection device for C-MOS devices, highlight his role as an innovator. His work continues to influence the development of more reliable and efficient electronic devices.