The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 1989
Filed:
Sep. 02, 1983
Isao Baba, Yokohama, JP;
Takeo Kondo, Yokosuka, JP;
Leiichi Yanagisawa, Kawasaki, JP;
Kenji Kohguchi, Kawasaki, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
An input protection device for a C-MOS device having an n-type semiconductor substrate and a p-type well region. The device comprises a diode consisting of the p-type well region and an n.sup.+ -type layer diffusion formed in the p-type well region and connected between a gate of a C-MOS FET and ground. The n.sup.+ -type layer of the diode has a higher impurity concentration and a greater diffusion depth than those of n.sup.+ -type layers formed in the p-type well region and constitute the source and drain of an n-channel MOSFET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile