Tokyo, Japan

Kenji Atsuumi


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2007-2009

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3 patents (USPTO):Explore Patents

Title: Kenji Atsuumi: Innovator in Semiconductor Technology

Introduction

Kenji Atsuumi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His innovative work focuses on vapor-phase growth methods and semiconductor manufacturing techniques.

Latest Patents

Atsuumi's latest patents include a vapor-phase growth method, a semiconductor manufacturing method, and a semiconductor device manufacturing method. The vapor-phase growth method involves depositing a silicon-germanium mixed crystal layer on a semiconductor substrate. This method consists of three key steps: first, introducing silicon raw material gas into a reaction furnace to deposit a silicon layer under reduced pressure; second, adding both silicon and germanium raw material gases to achieve a desired germanium concentration for the second layer; and third, depositing another silicon layer on top of the second layer. This innovative approach improves the quality of the semiconductor layer by reducing misfit dislocations.

Career Highlights

Kenji Atsuumi is currently employed at Sony Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Atsuumi collaborates with notable colleagues, including Hideo Yamagata and Takeyoshi Koumoto. Their combined expertise contributes to the development of cutting-edge semiconductor solutions.

Conclusion

Kenji Atsuumi's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in the industry. His work continues to influence advancements in semiconductor manufacturing methods.

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