Handa, Japan

Kengo Takeuchi

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Ngk Insulators, Inc.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kengo Takeuchi. Retrieved from https://idiyas.com/inventor/kengo-takeuchi-ff6xco14

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Kengo Takeuchi: Innovator in Gas Sensing Technology

Introduction

Kengo Takeuchi is a notable inventor based in Handa, Japan. He has made significant contributions to the field of gas sensing technology. His innovative work has led to the development of a unique gas sensor that addresses specific measurement challenges.

Latest Patents

Kengo Takeuchi holds 1 patent for his invention of a gas sensor. This gas sensor features a sensor element that includes a gas inlet for introducing measurement target gases. Additionally, it has a protective cover containing a substance capable of decomposing ammonia. The design of the protective cover includes a gas-contact surface area ranging from 450 mm to 1145 mm, which is crucial for effective gas measurement.

Career Highlights

Kengo Takeuchi is associated with NGK Insulators, Inc., where he applies his expertise in gas sensing technology. His work at the company has been instrumental in advancing the capabilities of gas sensors used in various applications.

Collaborations

Kengo Takeuchi collaborates with talented coworkers, including Tomoya Seimori and Mika Murakami. Their combined efforts contribute to the innovative environment at NGK Insulators, Inc.

Conclusion

Kengo Takeuchi's contributions to gas sensing technology exemplify the impact of innovation in addressing real-world challenges. His work continues to influence the field and inspire future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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