Keng-Wei Lin

Title: Keng-Wei Lin: Innovator in Semiconductor Technology

Introduction

Keng-Wei Lin is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent work. His expertise and dedication to advancing technology have positioned him as a key figure in the industry.

Latest Patents

Keng-Wei Lin holds a patent for a semiconductor device and methods of formation. This patent describes a two-step etch technique used in a continuous polysilicon on oxide definition edge (CPODE) recess process. The process involves performing a first etch operation using an isotropic etch technique to create a recess in a dummy gate structure to a first depth. A second etch operation is then performed using an anisotropic etch technique to deepen the recess. This highly directional etch minimizes the risk of etching into adjacent portions of an interlayer dielectric layer and source/drain regions.

Career Highlights

Keng-Wei Lin is associated with Taiwan Semiconductor Manufacturing Company Limited, where he applies his expertise in semiconductor fabrication. His work has been instrumental in developing advanced manufacturing techniques that enhance the performance and reliability of semiconductor devices.

Collaborations

Keng-Wei Lin has collaborated with notable colleagues, including Chia-Chi Yu and Chun-Lung Ni. These partnerships have fostered innovation and contributed to the success of various projects within the semiconductor industry.

Conclusion

Keng-Wei Lin's contributions to semiconductor technology through his innovative patent and collaborative efforts highlight his importance in the field. His work continues to influence advancements in semiconductor manufacturing and device performance.