Miyagi, Japan

Keisuke Abe

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keisuke Abe. Retrieved from https://idiyas.com/inventor/keisuke-abe-s7508xey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Keisuke Abe: Innovator in Nanocomposite Technology

Introduction

Keisuke Abe is a prominent inventor based in Miyagi, Japan. He has made significant contributions to the field of nanocomposite technology. His innovative work has led to the development of a unique patent that showcases his expertise and creativity.

Latest Patents

Keisuke Abe holds a patent for a nanocomposite, which includes a matrix made of polyimide and surface-modified inorganic oxide particles. The patent describes a process for preparing this nanocomposite and a surface-emitting device that utilizes it. The surface of the inorganic oxide particles is modified with an imide functional group, enhancing the material's properties and applications.

Career Highlights

Keisuke Abe is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology and innovation. His work at this leading company allows him to collaborate with other talented professionals in the field.

Collaborations

Some of his notable coworkers include Hiroshi Miyao and Tadao Yagi. Their collaboration fosters a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Keisuke Abe's contributions to nanocomposite technology exemplify the spirit of innovation. His patent and ongoing work at Samsung Electronics Co., Ltd. highlight his role as a key figure in advancing materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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