Ibaraki, Japan

Keiko Tokushuku

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Shibaura Denki Kabushiki Kaisha. Active years: 1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keiko Tokushuku. Retrieved from https://idiyas.com/inventor/keiko-tokushuku

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1985

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1 patent (USPTO):Explore Patents

Title: Keiko Tokushuku: Innovator in Semiconductor Technology

Introduction

Keiko Tokushuku is a prominent inventor based in Ibaraki, Japan. She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique pressure-applied type semiconductor device.

Latest Patents

Keiko holds 1 patent for her invention titled "Pressure-applied type semiconductor device." This device features a metal stamp designed to urge a semiconductor body, which is formed with a peripheral annular groove. When pressure is applied, the groove undergoes elastic deformation, alleviating stress concentration in the semiconductor body directly beneath the edge of the metal stamp.

Career Highlights

Keiko Tokushuku is associated with Tokyo Shibaura Denki Kabushiki Kaisha, a leading company in the electronics sector. Her work at this organization has been instrumental in advancing semiconductor technologies.

Collaborations

Keiko collaborates with her coworker, Katsuhiko Takigami, to further enhance their research and development efforts in semiconductor devices.

Conclusion

Keiko Tokushuku's innovative contributions to semiconductor technology exemplify her dedication to advancing the field. Her patent reflects her commitment to improving device performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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