Shiga, Japan

Kei Fujibayashi

This inventor holds 1 USPTO granted patent. Top assignee: Murata Manufacturing Co., Ltd.. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kei Fujibayashi. Retrieved from https://idiyas.com/inventor/kei-fujibayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Kei Fujibayashi: Innovator in Dielectric Thin Film Technology

Introduction

Kei Fujibayashi is a notable inventor based in Shiga, Japan. He has made significant contributions to the field of dielectric thin film technology. His innovative methods have paved the way for advancements in various applications.

Latest Patents

Fujibayashi holds a patent for a method of forming a dielectric thin film pattern. This method involves depositing a dielectric thin film on a substrate that has a resist pattern using a vapor deposition method. The materials used for the dielectric thin film include at least one of CeO₂, Sm₂O₃, Dy₂O₃, Y₂O₃, TiO₂, Al₂O₃, and MgO. The process concludes with the removal of the resist pattern, resulting in a patterned dielectric thin film. He has 1 patent to his name.

Career Highlights

Fujibayashi is associated with Murata Manufacturing Co., Ltd., a leading company in the electronics industry. His work has contributed to the development of advanced materials and technologies that are essential for modern electronic devices.

Collaborations

Some of his notable coworkers include Ryoichiro Takahashi and Tadayuki Okawa. Their collaborative efforts have further enhanced the research and development initiatives within their field.

Conclusion

Kei Fujibayashi is a prominent figure in the realm of dielectric thin film technology. His innovative methods and contributions continue to influence advancements in electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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