Keang H Kho

Title: Keang H Kho: Innovator in Semiconductor Technology

Introduction

Keang H Kho is a notable inventor based in Garden Grove, California. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to field effect transistors.

Latest Patents

Keang H Kho holds a patent for "Embedded hydrogen inhibitors for semiconductor field effect transistors." This invention involves a field effect transistor (FET) device that includes a substrate and multiple semiconductor layers. The top semiconductor layer is a heavily doped cap layer, while a Schottky barrier layer is positioned directly below it. A gate recess is formed through the cap layer and into the Schottky barrier layer. The FET device features a gate terminal with a titanium layer, an inhibitor layer on the titanium layer, and a gold layer on the inhibitor layer. This design effectively prevents hydrogen gas from dissociating into hydrogen atoms, thereby reducing or preventing hydrogen poisoning of the FET device. Keang H Kho has 1 patent to his name.

Career Highlights

Keang H Kho is currently employed at Northrop Grumman Systems Corporation, where he continues to work on advancing semiconductor technologies. His expertise in this field has positioned him as a valuable asset to his team and the company.

Collaborations

Throughout his career, Keang has collaborated with notable colleagues, including Yeong-Chang Chou and Richard Lai. These collaborations have further enhanced his contributions to the semiconductor industry.

Conclusion

Keang H Kho's innovative work in semiconductor technology, particularly his patent on embedded hydrogen inhibitors, showcases his commitment to advancing the field. His contributions are significant and reflect his expertise and dedication to innovation.