Company Filing History:
Years Active: 2005
Title: Ke Xu - Innovator in Semiconductor Technology
Introduction
Ke Xu is a prominent inventor based in Chiba, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative approaches to nitride-based hetero-structures. His work is characterized by a focus on enhancing the performance and manufacturability of semiconductor devices.
Latest Patents
Ke Xu holds a patent for a semiconductor device having a nitride-based hetero-structure and a method of manufacturing the same. The objective of this invention is to provide a semiconductor device where the epitaxial nitride film has a uniformly flat surface at a single molecule level. This is achieved by utilizing a sapphire substrate modified to be nitride-surfaced, along with a series of layers including a GaN buffer layer, N polarity GaN layer, N polarity AlN layer, and an N polarity InN/InGaN multi-layered device structure, culminating in an Al polarity AlN layer and a GaN cap layer. This innovative design aims to simplify the fabrication process of high-quality semiconductor devices.
Career Highlights
Ke Xu is affiliated with Chiba University, where he continues to advance research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices, contributing to the ongoing evolution of the semiconductor industry.
Collaborations
Ke Xu collaborates with Akihiko Yoshikawa, enhancing the research output and innovation in their field. Their partnership exemplifies the importance of teamwork in achieving groundbreaking advancements in technology.
Conclusion
Ke Xu's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only addresses current challenges but also paves the way for future developments in semiconductor devices.