Ke Sun

Title: Ke Sun: Inventor of Flexible III-V Nanowire Structures.

Introduction

Ke Sun is an inventor associated with the University of California and based in La Jolla, California. His patent work concerns growing vertical Group III-V semiconductor nanowires on silicon and developing flexible structures that incorporate nanowire arrays.

Latest Patents

Sun is credited with 1 patent: “Vertical Group III-V Nanowires on Si, Heterostructures, Flexible Arrays and Fabrication.” The invention describes a process for growing vertical III-V nanowires directly on silicon after removing the substrate’s native oxide and promptly placing it in a reaction chamber for growth.

The nanowires can have core-shell structures with complementary doping, enabling radial homojunctions or heterojunctions. Their geometry is designed to support strong optical absorption along the nanowire axis while shortening the distance carriers travel radially before collection. The patent also describes varying alloy composition and forming radial or axial junctions.

For flexible devices, nanowire arrays are embedded in polymer and released from the growth substrate. The resulting structures can include core-shell or core-multishell nanowires.

Career Highlights

The available information identifies Sun’s patent and his association with the University of California. It does not provide further details about his position, education, or broader career history.

Collaborations

Sun’s listed coworkers include Cesare Soci and Yi Jing. The patent’s described approach combines semiconductor nanowire growth, heterostructure design, and polymer embedding to create flexible arrays.

Conclusion

Ke Sun’s patent focuses on growing vertical Group III-V nanowires on silicon and adapting them into flexible, polymer-embedded structures with potential device applications.