Ke Feng

Title: Ke Feng: Innovator in Integrated Circuit Technology

Introduction

Ke Feng is a prominent inventor based in Chengdu, China, known for his contributions to microelectronic technology and integrated circuits. With a total of two patents to his name, he has made significant advancements in the field of integrated circuit structures.

Latest Patents

One of his latest patents is the "Nano-wall integrated circuit structure with high integrated density." This invention relates to microelectronic technology and integrated circuits (IC). The nano-wall integrated circuit unit structure, referred to as NWaFET, offers a high integration density that improves the overall integration of ICs. It significantly shortens the channel length, enhances the flexibility of the device channel width-to-length ratio adjustment, and saves chip area. Another notable patent is the "Metal oxide semiconductor integrated circuit basic unit." This patent describes a MOS integrated circuit basic unit that includes various semiconductor regions and electrodes, designed to optimize the performance of integrated circuits.

Career Highlights

Ke Feng is affiliated with the University of Electronic Science and Technology of China, where he continues to innovate and contribute to the field of electronics. His work focuses on enhancing the efficiency and effectiveness of integrated circuits, which are crucial for modern electronic devices.

Collaborations

He has collaborated with notable colleagues such as Ping Li and Yongbo Liao, further enriching his research and development efforts in integrated circuit technology.

Conclusion

Ke Feng's innovative work in integrated circuit technology exemplifies the advancements being made in microelectronics. His patents reflect a commitment to improving the efficiency and integration of electronic components, paving the way for future developments in the field.