Sendai, Japan

Kazuo Tsubouchi

This inventor holds 0 USPTO granted patents, plus 1 CIPO patent.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuo Tsubouchi. Retrieved from https://idiyas.com/inventor/kazuo-tsubouchi-g5n57cm8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Title: Kazuo Tsubouchi: Innovator in Integrated Circuit Technology

Introduction

Kazuo Tsubouchi is a notable inventor based in Sendai-Shi, Japan. He has made significant contributions to the field of integrated circuits, particularly through his innovative work with depletion type MOSFETs. His research has paved the way for advancements in semiconductor technology.

Latest Patents

Kazuo Tsubouchi holds a patent related to an integrated circuit. This invention allows for a depletion operation to be realized using a depletion type MOSFET at room temperature or liquid nitrogen temperature. Notably, this can be achieved without doping the channel portion below the gate electrode with impurities that have a conductivity type opposite to that of the semiconductor substrate. Furthermore, this FET can construct an inverter in conjunction with an enhancement type FET, enabling integration on a single substrate.

Career Highlights

Throughout his career, Tsubouchi has worked in various capacities that have contributed to his expertise in semiconductor technology. His work has been influential in the development of integrated circuits, showcasing his innovative approach to engineering challenges.

Collaborations

Kazuo Tsubouchi has collaborated with notable individuals in the field, including Nobuo Mikoshiba and Kazuya Masu. These collaborations have further enriched his contributions to technology and innovation.

Conclusion

Kazuo Tsubouchi's work in integrated circuit technology exemplifies the spirit of innovation. His contributions have had a lasting impact on the field, and his inventions continue to influence the development of modern electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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