Zama, Japan

Kazuo Ozaki

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Fujitsu Corporation. Active years: 1995-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuo Ozaki. Retrieved from https://idiyas.com/inventor/kazuo-ozaki-u7jnye6j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 66.7

Average Co-Inventor Count = 1.7

ph-index = 1

Forward Citations = 10(Granted Patents)


Location History:

  • Isehara, JP (1995)
  • Zama, JP (2015)

Company Filing History:


Years Active: 1995-2026

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3 patents (USPTO):Explore Patents

Title: Kazuo Ozaki: Innovator in Imaging Technology

Introduction

Kazuo Ozaki is a prominent inventor based in Zama, Japan. He has made significant contributions to the field of imaging technology, holding a total of 3 patents. His work focuses on developing advanced imaging devices and methods for growing semiconductor layers.

Latest Patents

One of his latest patents is an imaging device that includes a plurality of first absorption layers designed to absorb infrared rays within a specific wavelength range. This device generates pixel signals for multiple pixels. Additionally, it features at least one second absorption layer that absorbs infrared rays of a different wavelength range, producing a common pixel signal. The device also incorporates first electrodes to extract pixel signals from the first absorption layers and a second electrode for the common pixel signal.

Another notable patent is a method for growing a HgCdTe epitaxial layer on a semiconductor substrate. This method involves creating a crystalline CdTe semiconductor layer on a substrate, such as sapphire, which does not interdiffuse with the materials in the semiconductor layer. The substrate is then placed in an enclosure with a Hg-Cd-Te source rich in Te, and both are heated to establish three-phase equilibrium conditions. This process allows for the conversion of the CdTe layer into a ternary semiconductor compound, which is useful as a sensing device.

Career Highlights

Kazuo Ozaki is currently employed at Fujitsu Corporation, where he continues to innovate in the field of imaging technology. His work has been instrumental in advancing the capabilities of imaging devices, particularly in infrared applications.

Collaborations

He has collaborated with notable coworkers, including Tetsuo Saito and Tetsuya Kochi, contributing to various projects that enhance imaging technology.

Conclusion

Kazuo Ozaki's contributions to imaging technology through his patents and work at Fujitsu Corporation highlight his role as a key innovator in the field. His advancements in imaging devices and semiconductor growth methods continue to influence the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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