Kobe, Japan

Kazuo Hamashima

This inventor holds 1 USPTO granted patent. Top assignee: Tocalo Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuo Hamashima. Retrieved from https://idiyas.com/inventor/kazuo-hamashima-25i2sm0c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Kazuo Hamashima and Tungsten-Based Thermal Spray Technology.

Introduction

Kazuo Hamashima is an inventor associated with Kobe, Japan, and Tocalo Co., Ltd. His patent work addresses materials designed for demanding industrial environments, including plasma etching equipment that uses halogen gas.

Latest Patents

Hamashima is associated with 1 patent: “Tungsten-Based Thermal Spray Coating and Material for Thermal Spraying to Obtain It.” The invention describes a coating with tungsten as its matrix phase and oxides containing silicon and boron as a dispersed phase. It also covers a thermal-spray material containing 1–7 wt% silicon, 0.5–3 wt% boron, and tungsten as the remainder, apart from unavoidable impurities. The patent further describes thermally spraying this material to produce the coating and identifies its potential use on components for plasma etching devices.

Career Highlights

The patent reflects Hamashima’s work on tungsten-based coatings and thermal-spray materials intended for specialized equipment. The proposed composition combines tungsten with silicon- and boron-containing constituents to create a coating suited to applications involving halogen gas.

Collaborations

Hamashima’s listed coworkers include Masashi Morisasa and Shinsuke Anai. His company affiliation is Tocalo Co., Ltd.

Conclusion

Kazuo Hamashima’s patent focuses on a tungsten-based thermal-spray coating and its production material, with potential applications in plasma etching equipment.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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