Tokyo, Japan

Kazunori Umeda

USPTO Granted Patents = 6 

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 31(Granted Patents)


Location History:

  • Narashinoshi, JP (1991)
  • Tokyo, JP (2003 - 2004)
  • Higashimurayama, JP (2004 - 2005)

Company Filing History:


Years Active: 1991-2005

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6 patents (USPTO):Explore Patents

Title: Kazunori Umeda: Innovator in Semiconductor Technology

Introduction

Kazunori Umeda is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on improving the reliability and efficiency of semiconductor devices.

Latest Patents

One of Umeda's latest patents is a semiconductor device and method of manufacturing thereof. This innovative method involves several steps, including the formation of a thick gate oxide film in a first region of a substrate and a thin gate oxide film in a second region. The process also includes applying oxynitridation to these gate oxide films, forming gate electrodes on these films, and implanting nitrogen-containing ions into the interface between the thick gate oxide film and the substrate. This approach enhances the hot carrier reliability of the MISFETs that utilize a thick gate insulation film, thereby improving overall device performance.

Career Highlights

Kazunori Umeda has worked with notable companies such as Hitachi, Ltd. and the Educational Foundation Chuo University. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Umeda has collaborated with esteemed colleagues, including Eiichi Murakami and Akio Nishida. Their joint efforts have contributed to advancements in the semiconductor field.

Conclusion

Kazunori Umeda's innovative work in semiconductor technology has led to significant advancements in device reliability and performance. His contributions continue to influence the industry and inspire future innovations.

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